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As semiconductor devices evolve toward higher frequencies, higher voltages, and extreme miniaturization, power densities in modern chips often exceed 1000 W/cm2. At this level, traditional heat-sinking materials like Copper (Cu), Aluminum Nitride (AlN), or Beryllium Oxide (BeO) reach their physical limits. Tiansheng Hengzuan (TSHZ) delivers CVD Self-standing Diamond Thick Films, providing the ultimate heat-spreading solution for GaN-on-Diamond RF modules and high-power laser diodes.
In solid-state physics, thermal conductivity is driven by the movement of either electrons or phonons. Diamond, a covalently bonded crystal, conducts heat through lattice vibrations (phonons), resulting in the highest room-temperature thermal conductivity of any known material.
| Material | Thermal Conductivity (W/m⋅K) | Coeff. of Thermal Expansion (10−6/K) | Dielectric Constant |
| CVD Diamond (TSHZ) | 1200 – 2000 | 1.1 | 5.7 |
| Pure Copper (Cu) | 398 | 17.0 | – |
| Aluminum Nitride (AlN) | 170 – 230 | 4.5 | 8.5 |
| Beryllium Oxide (BeO) | 250 | 7.6 | 6.7 |
In high-power semiconductor devices, heat is typically concentrated in microscopic “Hot Spots.”
The Logic: A diamond heat sink acts as a superior “heat spreader.” Its extreme thermal conductivity allows heat to diffuse laterally at near-instantaneous speeds. This rapid dispersion significantly lowers the peak junction temperature, effectively doubling or tripling device lifespan or allowing for a 20%+ increase in power output at the same operating temperature.
The Coefficient of Thermal Expansion (CTE) of diamond (approx. 1.1 ×10-6/K) is closely matched with advanced semiconductor materials like Gallium Nitride (GaN) and Silicon Carbide (SiC).
The Benefit: During rapid thermal cycling, this synchronization minimizes thermo-mechanical stress between the chip and the substrate. This prevents solder joint fatigue, delamination, or chip cracking—critical for aerospace and defense applications.
The efficiency of a heat sink is dictated not just by its bulk conductivity, but by its Interface Thermal Resistance (ITR).
The Solution: TSHZ utilizes Chemical Mechanical Polishing (CMP) to reduce the surface roughness of the diamond film to Ra < 5nm. This extreme flatness ensures nearly 100% contact area between the chip and the diamond, minimizing thermal impedance.
To facilitate seamless chip bonding, we provide high-precision metallization layers (e.g., Ti/Pt/Au or Cr/Sn) customized to your specifications.
The Process: Atomic-level Physical Vapor Deposition (PVD) ensures superior adhesion between the metal layer and the diamond surface, supporting eutectic bonding and high-reliability soldering processes.
GaN RF Power Amplifiers: Resolving instantaneous heat surges in 5G/6G base stations and radar systems.
High-Power Semiconductor Lasers (LD): Stabilizing output wavelengths and preventing “redshift” in medical and industrial laser systems.
High-Power LEDs & Power Electronics (IGBT): Enhancing thermal stability in high-voltage environments, allowing for significantly smaller cooling modules in New Energy Vehicles (NEV).
The competition in modern electronics is a battle against heat. Tiansheng Hengzuan (TSHZ) diamond heat sinks represent the final piece of the thermal puzzle. By bypassing the “Thermal Barrier,” we enable our clients to push their hardware to higher power levels with absolute reliability.
Graphite, Ceramics, and Carbon Fiber are the future, but they are “tool killers.” If you’re still using traditional coating, you’re fighting a losing battle.
Our CVD (Chemical Vapor Deposition) Diamond Coating creates a real crystalline diamond layer on the carbide substrate. This isn’t just a “finish”—it’s a shield.
Why top distributors choose our CVD series:
1.Ultra-Low Friction: Prevents chip welding and heat buildup.
2.Extreme Abrasion Resistance: Maintains sharp cutting edges $20 \times$ longer.
3.Surface Finish: Mirror-like results on the workpiece, zero secondary polishing needed.
